New PhD Opportunity for 2019: Development of Quantum Dot Active Devices

PhD Opportunity: Development of Quantum Dot Active Devices



The fast maturing field of Silicon Photonics research is already being transferred to industry applications by some of the leading technological companies including Intel, IBM, Hewlett Packard and Cisco. Primary industrial use of this technology is in optical interconnects for datacom/telecom applications. In order to develop this technology further it will be essential to integrate active devices on the silicon platform with improved manufacturability and scalability. It is anticipated that research into the direct epitaxial integration of III-V materials on Si will lead to essential developments and improvements in this area. Active devices grown via epitaxy on Si normally use quantum wells, however, the crystalline defects formed during epitaxy limits performance and lifetime. Due to defect-tolerance, temperature and radiation hardness, quantum dots are the main candidate to further improve performance and lifetimes towards a better scalability and manufacturability standard.



The goal of this PhD is to invent and develop proof-of-concept quantum dot devices in order to overcome the traditional challenges of epitaxial growth of III-V over Si. The student will work within the framework of the Future Compound Semiconductor Manufacturing Hub (CS Hub, which comprises 35 industrial partners and 4 universities, with the objective of developing compound semiconductor research from materials to systems. Among the industrial companies involved in the CS Hub, Oclaro, Kaiam, Microsemi, IQE and Newport Wafer Fab are of relevance to this work.



Cardiff University has a long tradition of developing III-V quantum dot lasers over Si, from wafer growth to final characterization. The project will make use of the excellent resources and expertise available at the Institute for Compound Semiconductors (ICS). The objective of this project is to complement the laser with further quantum dot active devices based on compound semiconductors to deposit over Si.



Keywords: Integrated optics, integrated optoelectronic devices, silicon photonics, indium phosphide, gallium arsenide, silicon nitride, photonic systems, modulator, photodetector, laser, epitaxy.



To apply for this PhD opportunity, or to request further information on the project please contact Dr Nicolás Abadía (