Publications

Peer reviewed journal publications

Integrating III-V quantum dot lasers on silicon substrates for silicon photonics. Liao M, Chen S, Tang M, et al . Silicon Photonics XII, 2017, 10108; DOI: 10.1117/12.2249761
Optical Properties of Semi-polar (11-22) AlxGa1-xN with High Al Composition. Li Z, Wang L, Bruckbauer J, et al. Applied Physics Letters. 2017:10(9) 110, 082103. DOI 10.1063/1.4977428
Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band, Orchard J.R, Woodhead C, Wu J, et al. ACS Photonics, 2017:4(7), pp 1740-1746 DOI: 10.1021/acsphotonics.7b00276
A (Physical) Missous: A real time high sensitivity high spatial resolution quantum well hall effect magnetovision camera. Balaban E, Ahmad E, Zhang Z, et al. Sensors and Actuators A: Physical. 2017:265, pp 127-137 . DOI 10.1016/J.SNA.2017.08.035
Photonic integration platform with pump free microfluidics. Thomas R, Harrison A, Barrow D, et al. Optics express, 2017:25(20), pp 23634-23644. DOI 10.1364/OE.25.023634
Electrically pumped continuous-wave 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates. Chen S, Liao M, Tang M, et al. Optics Express, 2017:25(5), pp 4632-4639. DOI 10.1364/OE.25.004632
Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3 μm. Kryzhanovskaya N, Moiseev E, Polubavkina Y, et al. Optics Letters, 2017:42(17), pp 3319-3322. DOI 10.1364/OL.42.003319
Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes with Nonradiative Förster Resonance Energy Transfer. Ghataora S, Smith R.M, Athanasiou M, Wang T. ACS Photonics. 2017:5(2), pp 642-647. DOI 10.1021/acsphotonics.7b01291
High Detectivity and Transparent Few-Layer MoS2/Glassy-Graphene Heterostructure Photodetectors. Xu H, Han X, Dai X, et al. Advanced Mater. 2018:30(13), 1706561. DOI 10.1002/adma.201706561
Elevated temperature lasing from injection microdisk lasers on silicon. Kryzhanovskaya N.V, Moiseev E.I, Polubavkina Y.S, et al. Laser Physics Letters 2017:15(1), pp 015802. DOI 10.1088/1612-202X/aa9306
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes. Hou Y, Syed X.A, Jiu L, et al. Applied Physics Letter. 2017:111(20), 203901. DOI 10.1063/1.5001938
Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: simultaneous management of crystal quality improvement and cracking issue. Zi Z, Jiu L, Wang L, et al. Applied Physics Letter. 2017:110(8), 082103 (2017). DOI 10.1063/1.4977094
Polarized white light from hybrid organic/III-nitrides grating structures. Athanasiou M, Smith R.M, Shataro S and Wang T. Scientific Reports. 2017: 7, 39677. DOI 10.1038/srep39677
Monolithically multi-color lasing from an InGaN microdisk on a Si substrate. Athanasiou M, Smith R.M, Pugh J, et al . Scientific Reports. 2017:7, 10086. DOI 10.1038/s41598-017-10712-4
Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1−xN with x up to 0.56. Bruckbauer J, Li Z, Naresh-Kumar G, et al. Scientific Reports. 2017:7, 10804. DOI 10.1038/s41598-017-10923-9
Stimulated Emission from High Quality Bulk Semi-polar (11-22) GaN Overgrown on Regular Microrods Arrayed Template on m-Sapphire. Xu B, Jiu Y, Gong Y, et al. AIP Advances. 2017:7(4), 045009. DOI 10.1063/1.4981137
Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on Silicon. Li W, Chen S, Tang M, et al. Journal of Applied Physics, 2018:123(21); 215303. DOI 10.1063/1.5011161
Gain switching of monolithic 1.3 um InAs/GaAs quantum dot lasers on silicon. Hantschmann C, Vasil’ev P.P, Chen S, et al. Journal of Lightwave Technology, 2018:36(18), pp 3837-2842. DOI 10.1109/jlt.2018.2851918
CMOS-compatible multi-band plasmonic TE-pass polarizer. Abadia N, Ghulam Saber M.D, Bello F, et al. Optics Express. 2018:26(23), pp 30292-30304. DOI 10.1364/OE.26.030292.
Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher. Abdulwahid OS, Sexton J, Kostakis I, et al. IET Optoelectronics. 2018:12(1), pp 5-10. DOI 10.1049/iet-opt.2017.0068
Monolithic quantum-dot distributed feedback laser array on silicon. Wang Y, Chen S, Yu Y, et al. Optica 2018:5(5), pp 528-533. DOI 10.1364/OPTICA.5.000528
1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers. Wang J, Hu H, Yin H, et al. Photonics Research. 2018:6 (4); pp 321-325. https://doi.org/10.1364/PRJ.6.000321
Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices. Cai Y, Gong Y, Bai J, et al. IEEE Photonics Journal. 2018:10(5). DOI 10.1109/JPHOT.2018.2867821
Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Cai Y, Zhu C, Jiu L, et al. Materials (Basel). 2018:11(10), 1968. DOI 10.3390/ma11101968
Buffer induced current-collapse in GaN HEMTs on Highly Resistive Si Substrates. Chandrasekar H, Uren MJ, Eblabla A, et al. IEEE Electron Device Letters. 2018:39(10), pp 1556-1559. DOI 10.1109/LED.2018.2864562
Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate. Chen W, Deng Z, Guo D, et al. Journal of Lightwave Technology. 2018:36, 2572. DOI 10.1109/JLT.2018.2811388
Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors. Delmas M, Debnath M.C, Liang B, et al. Infrared Physics & Technology. 2018:94, pp 286-290. DOI 10.1016/j.infrared.2018.09.012
O-band InAs/GaAs quantum dot laser monolithically integrated on exact (001) Si substrate. Li K, Liu Z, Tang M, et al. Crystal Growth 2019:511, pp 56-60. DOI: 10.1016/J.CRYSGRO.2019.01.016
Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Liao M, Chen S, Liu Z, et al. Photonics Research. 2018:6(11), pp 1062-1066. DOI 10.1364/PRJ.6.001062
III–V quantum-dot lasers monolithically grown on silicon. Liao M, Chen S, Park J, et al. Semiconductor Science and Technology. 2018:33(12), 3002. DOI 10.1364/OFC.2019.W4E.1.
Investigations of Asymmetric Spacer Tunnel Layer Diodes for High-Frequency Applications. Zainul Ariffin K.N, Wang Y, Abdullah M.R.R, et al. IEEE Transactions on Electron Devices 2018:65(1), pp 64-71. DOI 10.1109/TED.2017.2777803
Integration of III-V lasers on Si for Si photonics. Tang M, Park J-S, Wang Z, et al. Progress in Quantum Physics, DOI 10.1016/j.pquantelec.2019.05.002
Monolithic quantum-dot distributed feedback laser array on silicon. Wang Y, Chen S, Yu Y, et al. Optica. 2018:5(5), pp 528-533 DOI 0.1364/OPTICA.5.000528
Thin Ge buffer layers on Silicon for Integration of III-V on Silicon. Yang J, Jurczak P, Cui F, et al . Journal of Crystal Growth. 2019:514, pp 109-113. DOI doi.org/10.1016/j.jcrysgro.2019.02.044
Overgrowth and characterisation of (11-22) semipolar GaN on (113) silicon with a two-step method. Cai Y, Yu X, Zhao X, Jiu L, et al. Semiconductor Science and Technology. 2019:34(4). DOI: 10.1088/1361-6641/AB08BF
Monolithically integrated white light LEDs on (11-22) semi-polar GaN templates. Poyatzis N, Athanasiou M, Nai J, et al. Scientific Reports. 2019:9. DOI 10.1038/s41598-018-37008-5
Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates. Bai J, Jiu J, Gong Y and Wang T. Semiconductor Science and Technology. 2018:33(12). DOI:10.1088/1361-6641/AAED93
Ultra-Energy-Efficient Photoelectrode Using Microstriped GaN on Si. Syed Z.A, Hou Y, Yu X, et al. ACS Photonics. 2019;6(5), pp 1302-1306. DOI 10.1021/acsphotonics.9b00478
Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN. Gong Y, Jiu L, Bruckbauer J, et al. Scientific Reports. 2019:9. DOI 10.1038/s41598-018-37575-7
The effect of post-growth rapid thermal annealing on InAs/InGaAsdot-in-a-well structure monolithically grown on Si. Li W, Chen S, Wu J, et al. Journal of Applied Physics. 2019:125. DOI 10.1063/1.5085175
Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. Naresh-Kumar G, Thomson D, Zhang Y, et al. Journal of Applied Physics. 2018:124(6), 065301. DOI 10.1063/1.5042515
Ultra-low threshold InAs/GaAs quantum dot microdisklasers on planar on-axis Si (001) substrates. Zhou T, Tang M, Xiang G, et al. Optica. 2019:6(4), pp 430-435. DOI 10.1364/OPTICA.6.000430
3D ITO-nanowire networks as transparent electrode for all-terrain substrate. Li Q, Tian Z, Zhang Y, et al. Scientific Reports. 12019:9. DOI 0.1038/s41598-019-41579-2
Overgrowth and strain investigation of (11-20) non-polar GaN on patterned templates on sapphire. Jiu L, Gong Y and Wang T. Scientific Reports. 2018:8. DOI 10.1038/s41598-018-28328-7
Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering. Li Q, Zhang Y, Feng L, et al. Nanotechnology. 2018:29(16). DOI 10.1088/1361-6528/aaafa7
Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor. Li Q, Zhang Y, Wang Z, et al. AIP Advances. 2018:8. DOI 10.1063/1.5048622
Cathodoluminescence studies of chevron features in semi-polar (112-2) InGaN/GaN multiple quantum well structures. Brasser C, Bruckbauer J, Gong Y, et al. Journal of .Applied Physics. 2018(123). DOI 10.1063/1.5021883
Optimization of 1.3 μm InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account. Wang J, Bai Y, Lui H, et al. Laser Physics. 2018:28(12) 33, DOI 10.1088/1555-6611/aae194
Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers. Salhi A, Alshaibani S, Alaskar Y, et al. Applied Physics Letters. 2018:113(10). DOI 10.1063/1.5048475
Strain-engineering of GaInAsSb Overgrown Layers and its Effects on the Optical Properties of InAs/GaAs quantum dot. Salhi A, Alshaibani S, Alaskar Y, et al. Optical Materials. 2018:79, pp 200-205. DOI 10.1016/j.optmat.2018.03.045
Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. Hantschmann , Vasil’ev P.P, Chen S, et al. Journal of Lightwave Technology. 2018:36(18), pp 3837-3842. DOI 10.1109/JLT.2018.2851918
Optimization of 1.3 µm InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account. Wang J, Bai Y, Liu H, et al. Laser Physics. 2018:28(12), p.126206. DOI 10.1088/1555-6611/aae194
InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation. Muttlak S.H, Abdulwahid O.S. Sexton J, et al. IEEE Journal of the Electron Devices Society. 2018:6, pp 254- 262. DOI 10.1109/JEDS.2018.2797951
Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants. Chen X.Y, Gu Y, Ma Y.J, et al. Materials Research Express. 2018:(1). DOI 10.1088/1555-6611/aae194
Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates. Shutts S, Allford C, Spinnier C, et al. IEEE Journal of Selected Topics in Quantum Electronics. 2019:25(6). DOI 10.1109/JSTQE.2019.2915994
The effect of post-growth rapid thermal annealing on InAs/InGaAsdot-in-a-well structure monolithically grown on Si. Li W, Chen S, Wu J, et al. Journal of Applied Physics. 2019:125, 135301. DOI 10.1063/1.5085175
Integration of III-V lasers on Si for Si photonics. Tang M, Park J-S, Wang Z, et al. Progress in Quantum Electronics. 2019:66, pp 1-18. DOI 10.1016/j.pquantelec.2019.05.002
Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector. Deng Z, Guo D, Gonzalez Burguete C, et al. Infrared Physics and Technology. 2019:101 pp 133-137
Origin of defect tolerance in InAs/GaAs quantum dot lasers grown on silicon. Liu Z, Hantschmann C, Tang M, et al. Journal of Lightwave Technology. 2019 DOI 10.1109/JLT.2019.2925598
Selective area intermixing of III–V quantum-dot lasers grown on silicon with two wavelength lasing emissions. Liao M, Li W, Tang M, et al. Semiconductor Science and Technology. 2019:34 (8). DOI 10.1088/1361-6641/ab2c24.
Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes. Zhang Y, Smith R.M, Jiu L, et al. Scientific Reports. 2019:9, 9735. DOI 10.1038/s41598-019-46292-8
Optical and polarisation properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates. Bai J, Jiu J, Poyiatzis N, et al. Scientific Reports. 2019:9, 9770. DOI 10.1038/s41598-019-46343-0
Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope. Naresh-Kumar G, Bruckbauer J, Winkelmann A, et al. Nano Letters. 2019:19 (6), pp 3863-3870. DOI 10.1021/acs.nanolett.9b01054
Surface-breaking flaw detection in mild steel welds using quantum well hall effect sensor devices. Liang C-W, Sexton J, Biruu F.A and Missous M. AIP Conference Proceedings. 2019:2 (1). DOI 10.1063/1.5099818
Achieving wavelength emission beyond the C-band from Type-II InAs-GaAsSb quantum dots grown monolithically on silicon substrate. Salhi A, Alshaibani S, Alaskar Y, et al. Journal of Alloys and Compounds. 2019:771, pp 382-386.
Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers. Salhi A, Alshaibani S, Alaskar Y, et al. Nanoscale Research Letters. 2019:14, 41. DOI 10.1186/s11671-019-2877-2
Physical modelling of InGaAs–InAlAs APD and PIN photodetectors for> 25 Gb/s data rate applications. Abdulwahid O.S, Kostakis I, Muttlak S.G, et al. IET Optoelectrics. 2019:13(1), pp 40-45. DOI 10.1049/iet-opt.2018.5030
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission. Yu P, Li Z, Wu T, et al. ACS Nano. 2019:12(11), pp 13492 – 13500. DOI 10.1021/acsnano.9b07204
Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate. Pan S, Cao V, Liao M, et al. Journal of Semiconductors. 2019:40, 101302. DOI 10.1088/1674-4926/40/10/101302
Semi-polar InGaN-based green light-emitting diodes grown on silicon. Shen S, Zhao X, Yu X, et al. Physica Status Solidi A. 2019: DOI 10.1002/pssa.201900654
Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. C Trager-Cowan C, Alasmari A, AvisW, et al. Phonics Research. 2019:7(11), pp B73 – B82. DOI 10.1364/PRJ.7.000B73
Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm. Bai J, Gong Y.P, Zhang Y and Wang T. Solar Energy Materials and Solar Cells. 2018:175, pp 47–51. DOI 10.1016/j.solmat.2017.10.005
Indium tin oxide nanowires grown on Ni foam as voltage self-stabilizing supercapacitor electrode. Li Q, Wang Z, Zhang Y, et al. Journal of Materials Research. 2019:34(18), pp 3195-3203. DOI 10.1557/jmr.2019.241

Peer reviewed journal publications

Integrating III-V quantum dot lasers on silicon substrates for silicon photonics. Liao M, Chen S, Tang M, et al . Silicon Photonics XII, 2017, 10108; DOI: 10.1117/12.2249761

Optical Properties of Semi-polar (11-22) AlxGa1-xN with High Al Composition. Li Z, Wang L, Bruckbauer J, et al. Applied Physics Letters. 2017:10(9) 110, 082103. DOI 10.1063/1.4977428

Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band, Orchard J.R, Woodhead C, Wu J, et al. ACS Photonics, 2017:4(7), pp 1740-1746 DOI: 10.1021/acsphotonics.7b00276

A (Physical) Missous: A real time high sensitivity high spatial resolution quantum well hall effect magnetovision camera. Balaban E, Ahmad E, Zhang Z, et al. Sensors and Actuators A: Physical. 2017:265, pp 127-137 . DOI 10.1016/J.SNA.2017.08.035

Photonic integration platform with pump free microfluidics. Thomas R, Harrison A, Barrow D, et al. Optics express, 2017:25(20), pp 23634-23644. DOI 10.1364/OE.25.023634

Electrically pumped continuous-wave 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates. Chen S, Liao M, Tang M, et al. Optics Express, 2017:25(5), pp 4632-4639. DOI 10.1364/OE.25.004632

Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3 μm. Kryzhanovskaya N, Moiseev E, Polubavkina Y, et al. Optics Letters, 2017:42(17), pp 3319-3322. DOI 10.1364/OL.42.003319

Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes with Nonradiative Förster Resonance Energy Transfer. Ghataora S, Smith R.M, Athanasiou M, Wang T. ACS Photonics. 2017:5(2), pp 642-647. DOI 10.1021/acsphotonics.7b01291

High Detectivity and Transparent Few-Layer MoS2/Glassy-Graphene Heterostructure Photodetectors. Xu H, Han X, Dai X, et al. Advanced Mater. 2018:30(13), 1706561. DOI 10.1002/adma.201706561

Elevated temperature lasing from injection microdisk lasers on silicon. Kryzhanovskaya N.V, Moiseev E.I, Polubavkina Y.S, et al. Laser Physics Letters 2017:15(1), pp 015802. DOI 10.1088/1612-202X/aa9306

Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes. Hou Y, Syed X.A, Jiu L, et al. Applied Physics Letter. 2017:111(20), 203901. DOI 10.1063/1.5001938

Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: simultaneous management of crystal quality improvement and cracking issue. Zi Z, Jiu L, Wang L, et al. Applied Physics Letter. 2017:110(8), 082103 (2017). DOI 10.1063/1.4977094

Polarized white light from hybrid organic/III-nitrides grating structures. Athanasiou M, Smith R.M, Shataro S and Wang T. Scientific Reports. 2017: 7, 39677. DOI 10.1038/srep39677

Monolithically multi-color lasing from an InGaN microdisk on a Si substrate. Athanasiou M, Smith R.M, Pugh J, et al . Scientific Reports. 2017:7, 10086. DOI 10.1038/s41598-017-10712-4

Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1−xN with x up to 0.56. Bruckbauer J, Li Z, Naresh-Kumar G, et al. Scientific Reports. 2017:7, 10804. DOI 10.1038/s41598-017-10923-9

Stimulated Emission from High Quality Bulk Semi-polar (11-22) GaN Overgrown on Regular Microrods Arrayed Template on m-Sapphire. Xu B, Jiu Y, Gong Y, et al. AIP Advances. 2017:7(4), 045009. DOI 10.1063/1.4981137

Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on Silicon. Li W, Chen S, Tang M, et al. Journal of Applied Physics, 2018:123(21); 215303. DOI 10.1063/1.5011161

Gain switching of monolithic 1.3 um InAs/GaAs quantum dot lasers on silicon. Hantschmann C, Vasil’ev P.P, Chen S, et al. Journal of Lightwave Technology, 2018:36(18), pp 3837-2842. DOI 10.1109/jlt.2018.2851918

CMOS-compatible multi-band plasmonic TE-pass polarizer. Abadia N, Ghulam Saber M.D, Bello F, et al. Optics Express. 2018:26(23), pp 30292-30304. DOI 10.1364/OE.26.030292.

Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher. Abdulwahid OS, Sexton J, Kostakis I, et al. IET Optoelectronics. 2018:12(1), pp 5-10. DOI 10.1049/iet-opt.2017.0068

Monolithic quantum-dot distributed feedback laser array on silicon. Wang Y, Chen S, Yu Y, et al. Optica 2018:5(5), pp 528-533. DOI 10.1364/OPTICA.5.000528

1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers. Wang J, Hu H, Yin H, et al. Photonics Research. 2018:6 (4); pp 321-325. https://doi.org/10.1364/PRJ.6.000321

Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices. Cai Y, Gong Y, Bai J, et al. IEEE Photonics Journal. 2018:10(5). DOI 10.1109/JPHOT.2018.2867821

Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Cai Y, Zhu C, Jiu L, et al. Materials (Basel). 2018:11(10), 1968. DOI 10.3390/ma11101968

Buffer induced current-collapse in GaN HEMTs on Highly Resistive Si Substrates. Chandrasekar H, Uren MJ, Eblabla A, et al. IEEE Electron Device Letters. 2018:39(10), pp 1556-1559. DOI 10.1109/LED.2018.2864562

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate. Chen W, Deng Z, Guo D, et al. Journal of Lightwave Technology. 2018:36, 2572. DOI 10.1109/JLT.2018.2811388

Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors. Delmas M, Debnath M.C, Liang B, et al. Infrared Physics & Technology. 2018:94, pp 286-290. DOI 10.1016/j.infrared.2018.09.012

O-band InAs/GaAs quantum dot laser monolithically integrated on exact (001) Si substrate. Li K, Liu Z, Tang M, et al. Crystal Growth 2019:511, pp 56-60. DOI: 10.1016/J.CRYSGRO.2019.01.016

Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Liao M, Chen S, Liu Z, et al. Photonics Research. 2018:6(11), pp 1062-1066. DOI 10.1364/PRJ.6.001062

III–V quantum-dot lasers monolithically grown on silicon. Liao M, Chen S, Park J, et al. Semiconductor Science and Technology. 2018:33(12), 3002. DOI 10.1364/OFC.2019.W4E.1.

Investigations of Asymmetric Spacer Tunnel Layer Diodes for High-Frequency Applications. Zainul Ariffin K.N, Wang Y, Abdullah M.R.R, et al. IEEE Transactions on Electron Devices 2018:65(1), pp 64-71. DOI 10.1109/TED.2017.2777803

Integration of III-V lasers on Si for Si photonics. Tang M, Park J-S, Wang Z, et al. Progress in Quantum Physics, DOI 10.1016/j.pquantelec.2019.05.002

Monolithic quantum-dot distributed feedback laser array on silicon. Wang Y, Chen S, Yu Y, et al. Optica. 2018:5(5), pp 528-533 DOI 0.1364/OPTICA.5.000528

Thin Ge buffer layers on Silicon for Integration of III-V on Silicon. Yang J, Jurczak P, Cui F, et al . Journal of Crystal Growth. 2019:514, pp 109-113. DOI doi.org/10.1016/j.jcrysgro.2019.02.044

Overgrowth and characterisation of (11-22) semipolar GaN on (113) silicon with a two-step method. Cai Y, Yu X, Zhao X, Jiu L, et al. Semiconductor Science and Technology. 2019:34(4). DOI: 10.1088/1361-6641/AB08BF

Monolithically integrated white light LEDs on (11-22) semi-polar GaN templates. Poyatzis N, Athanasiou M, Nai J, et al. Scientific Reports. 2019:9. DOI 10.1038/s41598-018-37008-5

Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates. Bai J, Jiu J, Gong Y and Wang T. Semiconductor Science and Technology. 2018:33(12). DOI:10.1088/1361-6641/AAED93

Ultra-Energy-Efficient Photoelectrode Using Microstriped GaN on Si. Syed Z.A, Hou Y, Yu X, et al. ACS Photonics. 2019;6(5), pp 1302-1306. DOI 10.1021/acsphotonics.9b00478

Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN. Gong Y, Jiu L, Bruckbauer J, et al. Scientific Reports. 2019:9. DOI 10.1038/s41598-018-37575-7

The effect of post-growth rapid thermal annealing on InAs/InGaAsdot-in-a-well structure monolithically grown on Si. Li W, Chen S, Wu J, et al. Journal of Applied Physics. 2019:125. DOI 10.1063/1.5085175

Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. Naresh-Kumar G, Thomson D, Zhang Y, et al. Journal of Applied Physics. 2018:124(6), 065301. DOI 10.1063/1.5042515

Ultra-low threshold InAs/GaAs quantum dot microdisklasers on planar on-axis Si (001) substrates. Zhou T, Tang M, Xiang G, et al. Optica. 2019:6(4), pp 430-435. DOI 10.1364/OPTICA.6.000430

3D ITO-nanowire networks as transparent electrode for all-terrain substrate. Li Q, Tian Z, Zhang Y, et al. Scientific Reports. 12019:9. DOI 0.1038/s41598-019-41579-2

Overgrowth and strain investigation of (11-20) non-polar GaN on patterned templates on sapphire. Jiu L, Gong Y and Wang T. Scientific Reports. 2018:8. DOI 10.1038/s41598-018-28328-7

Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering. Li Q, Zhang Y, Feng L, et al. Nanotechnology. 2018:29(16). DOI 10.1088/1361-6528/aaafa7

Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor. Li Q, Zhang Y, Wang Z, et al. AIP Advances. 2018:8. DOI 10.1063/1.5048622

Cathodoluminescence studies of chevron features in semi-polar (112-2) InGaN/GaN multiple quantum well structures. Brasser C, Bruckbauer J, Gong Y, et al. Journal of .Applied Physics. 2018(123). DOI 10.1063/1.5021883

Optimization of 1.3 μm InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account. Wang J, Bai Y, Lui H, et al. Laser Physics. 2018:28(12) 33, DOI 10.1088/1555-6611/aae194

Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers. Salhi A, Alshaibani S, Alaskar Y, et al. Applied Physics Letters. 2018:113(10). DOI 10.1063/1.5048475

Strain-engineering of GaInAsSb Overgrown Layers and its Effects on the Optical Properties of InAs/GaAs quantum dot. Salhi A, Alshaibani S, Alaskar Y, et al. Optical Materials. 2018:79, pp 200-205. DOI 10.1016/j.optmat.2018.03.045

Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. Hantschmann , Vasil’ev P.P, Chen S, et al. Journal of Lightwave Technology. 2018:36(18), pp 3837-3842. DOI 10.1109/JLT.2018.2851918

Optimization of 1.3 µm InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account. Wang J, Bai Y, Liu H, et al. Laser Physics. 2018:28(12), p.126206. DOI 10.1088/1555-6611/aae194

InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation. Muttlak S.H, Abdulwahid O.S. Sexton J, et al. IEEE Journal of the Electron Devices Society. 2018:6, pp 254- 262. DOI 10.1109/JEDS.2018.2797951

Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants. Chen X.Y, Gu Y, Ma Y.J, et al. Materials Research Express. 2018:(1). DOI 10.1088/1555-6611/aae194

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates. Shutts S, Allford C, Spinnier C, et al. IEEE Journal of Selected Topics in Quantum Electronics. 2019:25(6). DOI 10.1109/JSTQE.2019.2915994

The effect of post-growth rapid thermal annealing on InAs/InGaAsdot-in-a-well structure monolithically grown on Si. Li W, Chen S, Wu J, et al. Journal of Applied Physics. 2019:125, 135301. DOI 10.1063/1.5085175

Integration of III-V lasers on Si for Si photonics. Tang M, Park J-S, Wang Z, et al. Progress in Quantum Electronics. 2019:66, pp 1-18. DOI 10.1016/j.pquantelec.2019.05.002

Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector. Deng Z, Guo D, Gonzalez Burguete C, et al. Infrared Physics and Technology. 2019:101 pp 133-137

Origin of defect tolerance in InAs/GaAs quantum dot lasers grown on silicon. Liu Z, Hantschmann C, Tang M, et al. Journal of Lightwave Technology. 2019 DOI 10.1109/JLT.2019.2925598

Selective area intermixing of III–V quantum-dot lasers grown on silicon with two wavelength lasing emissions. Liao M, Li W, Tang M, et al. Semiconductor Science and Technology. 2019:34 (8). DOI 10.1088/1361-6641/ab2c24.

Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes. Zhang Y, Smith R.M, Jiu L, et al. Scientific Reports. 2019:9, 9735. DOI 10.1038/s41598-019-46292-8

Optical and polarisation properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates. Bai J, Jiu J, Poyiatzis N, et al. Scientific Reports. 2019:9, 9770. DOI 10.1038/s41598-019-46343-0

Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope. Naresh-Kumar G, Bruckbauer J, Winkelmann A, et al. Nano Letters. 2019:19 (6), pp 3863-3870. DOI 10.1021/acs.nanolett.9b01054

Surface-breaking flaw detection in mild steel welds using quantum well hall effect sensor devices. Liang C-W, Sexton J, Biruu F.A and Missous M. AIP Conference Proceedings. 2019:2 (1). DOI 10.1063/1.5099818

Achieving wavelength emission beyond the C-band from Type-II InAs-GaAsSb quantum dots grown monolithically on silicon substrate. Salhi A, Alshaibani S, Alaskar Y, et al. Journal of Alloys and Compounds. 2019:771, pp 382-386.

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers. Salhi A, Alshaibani S, Alaskar Y, et al. Nanoscale Research Letters. 2019:14, 41. DOI 10.1186/s11671-019-2877-2

Physical modelling of InGaAs–InAlAs APD and PIN photodetectors for> 25 Gb/s data rate applications. Abdulwahid O.S, Kostakis I, Muttlak S.G, et al. IET Optoelectrics. 2019:13(1), pp 40-45. DOI 10.1049/iet-opt.2018.5030

Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission. Yu P, Li Z, Wu T, et al. ACS Nano. 2019:12(11), pp 13492 – 13500. DOI 10.1021/acsnano.9b07204

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate. Pan S, Cao V, Liao M, et al. Journal of Semiconductors. 2019:40, 101302. DOI 10.1088/1674-4926/40/10/101302

Semi-polar InGaN-based green light-emitting diodes grown on silicon. Shen S, Zhao X, Yu X, et al. Physica Status Solidi A. 2019: DOI 10.1002/pssa.201900654

Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. C Trager-Cowan C, Alasmari A, AvisW, et al. Phonics Research. 2019:7(11), pp B73 – B82. DOI 10.1364/PRJ.7.000B73

Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm. Bai J, Gong Y.P, Zhang Y and Wang T. Solar Energy Materials and Solar Cells. 2018:175, pp 47–51. DOI 10.1016/j.solmat.2017.10.005

Indium tin oxide nanowires grown on Ni foam as voltage self-stabilizing supercapacitor electrode. Li Q, Wang Z, Zhang Y, et al. Journal of Materials Research. 2019:34(18), pp 3195-3203. DOI 10.1557/jmr.2019.241