Very recently, high-performance Si-based InAs/GaAs Quantum Dot lasers have been demonstrated with CW operation at high temperature (>75 0C) and long lifetimes (>100,000 hours). Here we will develop our world leading III-V-on-Si technology to create high performance lasers and semiconductor optical amplifiers (SOAs) for datacommunications applications. The principal objectives are to optimise gain per unit length (for high frequency) and to increase operation temperature to the required 125 0C maximum, while maintaining low current CW operation at 20mW optical output power. The project will focus on design innovations to determine whether such performance is possible, with epitaxial growth by project partners, and characterisation to explore and prove the physical behaviour leading to the achieved performance.
The student will work closely with other researchers in the EPSRC Future Compound Semiconductor Manufacturing Hub under the supervision of Prof. Peter Smowton.
Candidates are expected to have a strong background and interest in Optics/Photonics and Semiconductor Physics.
Start Date: Autumn 2017
Funding Notes
This project is funded by the EPSRC Future Compound Semiconductor Manufacturing Hub PhD studentship award through Cardiff University.
Full awards (tuition fees plus maintenance stipend) are open to UK Nationals and EU students who can satisfy UK residency requirements.
We reserve the right to close applications should sufficient applications be received.
Candidates are encouraged to contact us with informal enquiries.
