A pioneering type of patented computer memory known as ULTRARAM™ has been demonstrated on silicon wafers in what is a major step towards its large-scale manufacture.
ULTRARAM™ is a novel type of memory with extraordinary properties. It combines the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency and endurance of a working memory, like DRAM. To do this it utilises the unique properties of compound semiconductors, commonly used in photonic devices such as LEDS, laser diodes and infrared detectors, but not in digital electronics, which is the preserve of silicon.
Now, in a Hub funded collaboration between the Physics and Engineering Departments at Lancaster University and the Department of Physics at Warwick, ULTRARAM™ has been implemented on silicon wafers for the very first time.
Read this ground breaking research in the journal Advanced Electronic Materials.