We are proud to be able to offer assistance in the field of compound semiconductor research and industry. We are a highly skilled team of dedicated individuals, with the latest equipment at our disposal. If you would like to work with us, please contact us directly.
What We Do
We have a variety of equipment that can be available for use by the wider research community, including academics and industry.
Access can be arranged via research collaborations or directly via our application and charging system.
Please contact us for further details.
Institute of Compound Semiconductors
As part of our collaborative network, we work closely with the Institute of Compound Semiconductors (ICS). ICS has a variety of equipment that can be hired via a booking and payment system. Training can often be provided by arrangement.
Any equipment available through EPSRC Underpinning CS Hub Capital Investment in Cardiff University is available via the same booking and training system.
Most of this equipment is new, therefore the booking and charging systems for some items are under development. We thank you for your patience while we develop and fine-tune this system.
How can I get involved?
CS Hub (and Partner) Facilities:
Hub Partner, the Institute for Compound Semiconductors (ICS), has academic functions and fabrication facilities.
Hub Partner, the Compound Semiconductor Centre (CSC), leads on translation and has growth facilities.
Both the above partners, and the CS Hub (at Cardiff University) are part of an initiative to generate a major UK CS manufacturing cluster in South Wales.
Including the Hub’s spoke institutions, we can provide European leading facilities, including a full 200mm (8″) CS on Si wafer process line and closely related smaller scale fabrication tools, with common operating principles and maintenance arrangements, enabling the most effective translation of the envisaged research to manufacturing.
Complementary growth facilities will be provided at Manchester, UCL, Sheffield and Cardiff.
At Manchester two molecular beam epitaxy (MBE) systems, including high uniformity 200mm (8″) MBE, will focus on growth of GaAs for e.g. 2DEG magnetic sensors. There is also local 150mm fabrication and characterisation facilities include DCXRD, PL, CV and RF on wafer to 110GHz.
At UCL a unique CS and Si comprises growth facility consisting of a twin MBE system, where the III-V growth chamber is connected to the group IV chamber for capping underlying material with a pure and smooth Si epi surface before III-V epitaxy. In addition, the substrate can be heated to over 1000 0C for oxide desorption. Again local fabrication and characterization provides support to growth including lightwave component analysis to 67GHz and bit error rate testing to 100GBit/s.
At Sheffield a brand new MOVPE GaN growth system supplements existing capability and also has local material characterisation and extensive device testing facilities for advanced research on III-nitrides. The Sheffield activity will be developed in Cardiff on 150mm and 200mm MOVPE GaN reactors.
A Welsh Assembly Ser Cymru investment has also supported new MBE GaN and MBE and MOVPE As and Sb based systems. In Cardiff fabrication in the ICS is supported by materials and optoelectronic (400-4000nm) and RF device characterization (to 67GHz). This world leading capability enables research on the important CS material families and includes the wafer size scale-up and integrated epitaxial growth and processing, with direct comparisons between small and large scale, necessary for manufacturing. It allows the hub to fund personnel and consumables only to leverage the largest effect. ICS and CSC facilities provide laboratory and specialist clean-room space for co-located academics and industrialists to create maximum innovation and translational impact for the next stage beyond the EPSRC Hub.