Gallium nitride is a wide bandgap semiconductor of huge economic importance, and the subject of the Nobel Prize for Physics in 2014. It is the base material for lasers in Blu Ray drives, solid state lighting and next-generation high speed and high power transistors. GaN can be alloyed with indium and aluminium to tune emission from 200 to 2000nm, an unprecedented range for any semiconductor, making it a flexible platform for future device manufacturing. In addition, the material stiffness of GaN leads to high frequency and high-mechanical quality-factor oscillators that can be used as inertial sensors of superior performance to the silicon MEMS devices currently used in airbags, motion detectors and aerospace. We have developed a novel single-step manufacturing technique to create free-standing GaN devices. We will now build on this capability to create a novel design of GaN nano-laser. Laser material will be grown by the University of Cambridge, processed in Cardiff and characterised in Oxford: together delivering a technological break-through in GaN optoelectronics.